Patent · US Active

Wafer shape control for W2W bonding

US12374562B2 · kind B2 · utility

0Cited by
9References
20Claims
0Family size

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Inventors

Key dates

Filing dateAug 10, 2022
Grant dateJul 29, 2025
Priority date
Expiry dateOct 27, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.