Multi color stack for self aligned dual pattern formation for multi purpose device structures

US12374584B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Suketu Arun Parikh · San Jose, US
• Martin Jay Seamons · San Jose, US
• Jingmei Liang · San Jose, US
• Shuchi Sunil Ojha · Redwood City, US
• Tom Choi · Sunnyvale, US
• Nitin K. Ingle · San Jose, US
• Sanjay Natarajan · Portland, US

Key dates

• Filing date: Oct 19, 2021
• Grant date: Jul 29, 2025
• Expiry date: Dec 13, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.