Semiconductor device and method for manufacturing a plurality of semiconductive devices

US12374632B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gunther Mackh · Dresden, DE
• Martin Brandl · Kelheim, DE
• Bernhard Drummer · Tegernheim, DE

Key dates

• Filing date: Oct 18, 2022
• Grant date: Jul 29, 2025
• Expiry date: May 12, 2043

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/0257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line. The method includes in each semiconductor device region, making a semiconductor device precursor by making or applying at least one active element in an active region, making at least one trapping chamber and making, in a trapping region of the semiconductor device region positioned more peripherally than the active region, trapping apertures in fluid communication with the at least one trapping chamber; and singulating the semiconductor device regions by separating the semiconductor device precursors along the dicing portion lines.