Semiconductor structure and the forming method thereof
US12376323B2 · kind B2 · utility
0Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2022 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
The invention provides a semiconductor structure, which comprises a GaN gallium nitride (GaN) layer, an aluminum gallium nitride (AlGaN) layer on the gallium nitride layer, a polarization boost layer on and in direct contact with the aluminum gallium nitride layer, and a gate liner layer on the polarization boost layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.