Integrated circuit assemblies
US12381193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Jul 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various aspects of the present disclosure set forth IC dies, microelectronic assemblies, as well as related devices and packages. One aspect relates to disaggregating 3D monolithic memory and compute functions to enable tight coupling for fast memory access at high bandwidth. Another aspect relates to microelectronic assemblies relate to nano-TSVs with 3D monolithic memory. Further aspects relate to die stitching and the use of glass carrier structures in microelectronic assemblies. Various aspects disclosed herein advantageously provide a robust set of implementations that may enable significant improvements in terms of optimizing performance of individual IC dies, microelectronic assemblies including one or more of such dies, and IC packages and devices including one or more of such microelectronic assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.