Structure and method using a single crystalline bixbyite oxide layer in a orientation
US12382690B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | May 2, 2022 |
| Grant date | Aug 5, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layered structure including a substrate in [100] crystal orientation, a crystalline bixbyite oxide layer in [111] orientation, and a metal-containing layer crystallographically matched to the crystalline bixbyite oxide layer. Also a method of fabricating a layered structure comprising steps to: epitaxially deposit a crystalline bixbyite oxide in [111] orientation on a substrate in [100] crystal orientation; and deposit a metal-containing layer on the crystalline bixbyite oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.