Modification of program voltage level with read or program-verify adjustment for improving reliability in memory devices
US12386515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2024 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jan 24, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F3/0679
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for receiving a request for performing a programming operation on one or more memory blocks of a memory device, identifying a value of a media endurance metric associated with the one or more memory blocks, determining a programming voltage offset corresponding to the value of the media endurance metric, and performing, using the programming voltage offset, the programming operation on the one or more memory blocks. The method further includes identifying a program-verify voltage level associated with the one or more memory blocks, determining a program-verify voltage offset associated with the program-verify voltage level and the value of the media endurance metric, and performing, using the program-verify voltage level and the program-verify voltage offset, a program-verify operation on the one or more memory blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.