Defect examination on a semiconductor specimen
US12400319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Oct 28, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining a runtime image of the semiconductor specimen, generating a reference image based on the runtime image using a machine learning (ML) model, and performing defect examination on the runtime image using the generated reference image. The ML model is previously trained during setup using a training set comprising one or more pairs of training images, each pair including a defective image and a corresponding defect-free image. The training comprises, for each pair, processing the defective image by the ML model to obtain a predicted image, and optimizing the ML model to minimize a difference between the predicted image and the defect-free image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.