Hybrid manufacturing with modified via-last process
US12400997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2021 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Jun 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Microelectronic assemblies fabricated using hybrid manufacturing with modified via-last process are disclosed. The fabrication approach is based on using hybrid manufacturing to bond first and second IC structures originally provided on different dies but filling at least portions of vias that are supposed to couple across a bonding interface between the first and second IC structures with electrically conductive materials after the IC structures have been bonded. A resulting microelectronic assembly that includes the first and second IC structures bonded together may have vias extending through all of the first IC structure and into the second IC structure, thus providing electrical coupling between one or more components of the first IC structure and those of the second IC structure, where an electrically conductive material in the individual vias is continuous through the first IC structure and at least a portion of the second IC structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.