Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
US12406849B2 · kind B2 · utility
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3References
20Claims
0Family size
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Key dates
| Filing date | Jul 20, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | May 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.