Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the same
US12412854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2022 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Apr 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Bonding strength and yield can be enhanced by providing a mating pair of a convex bonding surface and a concave bonding surface. The convex bonding surface can be provided by employing a conductive barrier layer having a higher electrochemical potential than copper. The concave bonding surface can be provided by employing a conductive barrier layer having a lower electrochemical potential than copper. Alternatively additionally, a copper material portion in a bonding pad may include at least 10% volume fraction of (200) copper grains to provide high volume expansion toward a mating copper material portion. The mating copper material portion may be formed with at least 95% volume fraction of (111) copper grains to provide high surface diffusivity, or may be formed with at least 10% volume fraction of (200) copper grains to provide high volume expansion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.