Temperature detection using negative temperature coefficient resistor in GaN setting
US12416530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Apr 27, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2211/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.