Tin oxide films in semiconductor device manufacturing
US12417916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2021 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.