Method of conductive material deposition
US12417925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Dec 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate that includes: depositing a filling material over the substrate including a first recess and a second recess, the filling material filling the first recess and the second recess; patterning the filling material such that the first recess is reopened while the second recess remains filled with the filling material; filling the first recess with a conductive material to a first height; etching the filling material selectively to the conductive material to reopen the second recess; filling a remainder of the first recess and the second recess with the conductive material; and performing an etch back process to etch the conductive material such that the first recess and the second recess are filled with the conductive material to a second height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.