One-time programmable memory devices and methods
US12424293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided that includes a memory cell having a reversible resistance-switching memory element coupled in series with a selector element. The selector element has a first resistance. The resistance-switching memory element is configured to reversibly switch between a second resistance and a third resistance. The memory cell may be selectively configured as either a re-writeable memory cell or a one-time programmable memory cell. The memory cell functions as a one-time programmable memory cell regardless of whether the resistance-switching memory element has the second resistance, the third resistance, or is electrically shorted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.