Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer
US12424995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Sep 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02929
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.