Epitaxial process of forming ferrite, Fe.sub.3 O.sub.4 and .gamma.Fe.sub.2 O.sub.3 thin films on special materials
US3996095A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1975 |
| Grant date | Dec 7, 1976 |
| Priority date | — |
| Expiry date | Apr 16, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of polycrystals. A ferrite such as magnetite (Fe.sub.3 O.sub.4) is sputtered from a target onto the first thin film forming a mixture of .gamma.Fe.sub.2 O.sub.3 and Fe.sub.3 O.sub.4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200.degree.C for both steps when sputtering or evaporation is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.