Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
US4086642A · kind A · utility
109Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1976 |
| Grant date | Apr 25, 1978 |
| Priority date | — |
| Expiry date | Jan 13, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A protective circuit comprises a metal-oxide-semiconductor field effect transistor (MOSFET) to be protected, and a depletion-type MOSFET the gate and source of which are connected to each other and the souce of which is connected to the gate of the MOSFET to be protected, whereby the protective circuit which is suitable for a high-speed operation is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.