Ryoichi Hori
87Patents
27h-index
97Co-inventors
91Inventor score
Filing activity: Jan 13, 1976 → May 5, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4999519A | Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier | Electricity | 131 | Expired |
| US4086642A | Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device | Electricity | 109 | Expired |
| US5614847A | Semiconductor integrated circuit device having power reduction mechanism | Electricity | 87 | Expired |
| US5208782A | Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement | Electricity | 83 | Expired |
| US5386135A | Semiconductor CMOS memory device with separately biased wells | Emerging Cross-Sectional Technologies | 56 | Expired |
| US4894696A | Dynamic random access memory having a trench capacitor | Emerging Cross-Sectional Technologies | 54 | Expired |
| US5272393A | Voltage converter of semiconductor device | Physics | 53 | Expired |
| US5880604A | Semiconductor integrated circuit device having power reduction mechanism | Electricity | 50 | Expired |
| US5197033A | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Electricity | 46 | Expired |
| US4730132A | Semiconductor device having bipolar transistor and insulated gate field effect transistor with two potential power source | Electricity | 44 | Expired |
| US4482985A | Semiconductor integrated circuit | Physics | 41 | Expired |
| US4716313A | Pulse drive circuit | Electricity | 40 | Expired |
| US5497023A | Semiconductor memory device having separately biased wells for isolation | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4691304A | Semiconductor device having an arrangement for preventing operational errors | Electricity | 37 | Expired |
| US5579256A | Semiconductor memory device and defect remedying method thereof | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4739497A | Semiconductor memory | Electricity | 34 | Expired |
| US5148255A | Semiconductor memory device | Electricity | 34 | Expired |
| US5086238A | Semiconductor supply incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4796234A | Semiconductor memory having selectively activated blocks including CMOS sense amplifiers | Physics | 34 | Expired |
| US5045904A | Semiconductor device including an improved trench arrangement | Electricity | 33 | Expired |
| US6740958B2 | Semiconductor memory device | Electricity | 32 | Expired |
| US5528548A | Voltage converter of semiconductor device | Physics | 30 | Expired |
| US4611299A | Monolithic storage device | Physics | 29 | Expired |
| US4930112A | Semiconductor device having a voltage limiter | Physics | 29 | Expired |
| US5402375A | Voltage converter arrangement for a semiconductor memory | Physics | 28 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.