Radiation mask structure
US4171489A · kind A · utility
17Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1978 |
| Grant date | Oct 16, 1979 |
| Priority date | — |
| Expiry date | Sep 13, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The discovery that boron nitride and boron carbide films can be made in tension allows nondistorting radiation windows or masks to be realized. Both low and high pressure techniques for making the tensile films lead to related mask structures utilizing such films. The resulting structures are sufficiently distortion free to be useful for x-ray lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.