Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
US4570175A · kind A · utility
8Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1983 |
| Grant date | Feb 11, 1986 |
| Priority date | — |
| Expiry date | Jun 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one layer of insulator film and single-crystal film are alternately stacked and deposited on a surface of a semiconductor substrate, and an impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor. Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.