Laser interferometer system and method for monitoring and controlling IC processing
US4618262A · kind A · utility
150Cited by
5References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1984 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | Apr 13, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0675
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A laser interferometer system and associated method for etching endpoint detection, and for monitoring etching or growth to a selected depth. The process implemented by the system involves scanning the laser beam across scribe lines on a wafer which is undergoing fabrication (growth or etching) and monitoring the resulting interference pattern. Alternatively, the process implemented by this system involves moving the laser beam across the scribe line to detect the position of the scribe line; locking the laser beam on the scribe line; and monitoring the resulting interference pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.