Insulated gate field effect transistor
US4656492A · kind A · utility
34Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1985 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | Oct 15, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
An insulated gate field effect transistor is formed in one surface of a semiconductor substrate. The surface portion of a channel has an impurity distribution of the conduction type opposite to that of the substrate, which the deeper portion of the channel has an impurity distribution of the same conduction type as that of the substrate. Moreover, at least one of a source and a drain is formed of such an impurity layer of the conduction type opposite to that of the substrate as has its impurity distribution gently sloped by double diffusion processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.