Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking
US4672420A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Apr 12, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated during production of the structure with a conductive layer capable of withstanding metal removal means, and an upper metallization layer is subsequently applied to the structure. At least a portion of the subsequent metallization layer is in ohmic contact with the conductive layer and the lower metallization layer is protected by the intervening conductive layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. In a preferred embodiment, the use of the conductive layer over a metallization layer further enhances the construction process during patterning of a photoresist applied over the conductive layer by the use of a conductive material having antireflective properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.