Plasma treating method and apparatus therefor
US4911812A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1988 |
| Grant date | Mar 27, 1990 |
| Priority date | — |
| Expiry date | Oct 17, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C. under reduced pressure, and maintaining at least an exposed surface to an atmosphere at which the specimen is treated except a specimen place surface of a specimen table on which the specimen is placed at a temperature above a dew point temperature of gases under the atmosphere; and a plasma treating apparatus comprises a treating chamber, means for reducing and exhausting the interior of the treating chamber, means for introducing a treating gas into the treating chamber, means for forming the treating gas into a plasma, a specimen table on which the specimen treated by utilizing the plasma is placed within the treating chamber, means for cooling the specimen table so as to be able to cool the specimen to a low temperature less than 0.degree. C., and means for maintaining at least an exposed surface within the treating chamber except a specimen place surface of the specimen table at a temperature abov…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.