Plasma and plasma UV deposition of SiO.sub.2
US4916091A · kind A · utility
469Cited by
8References
8Claims
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Key dates
| Filing date | Dec 13, 1988 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Dec 13, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.