Processes depending on plasma generation using a helical resonator
US4918031A · kind A · utility
178Cited by
6References
38Claims
0Family size
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Key dates
| Filing date | Dec 28, 1988 |
| Grant date | Apr 17, 1990 |
| Priority date | — |
| Expiry date | Dec 28, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.