Semiconductor memory having trench capacitor formed with sheath electrode
US4918502A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1987 |
| Grant date | Apr 17, 1990 |
| Priority date | — |
| Expiry date | Nov 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
The present invention relates to a highly packaged semiconductor memory, and more particularly to a memory cell having a trench capacitor for use in a CMOS memory. The present invention discloses a semiconductor memory employing memory cells each constructed of a trench type charge storage capacitor formed within a substrate, and a switching transistor; one electrode of the capacitor having a sheath-shaped structure which is electrically continuous with the Si substrate at a bottom of a groove and whose sideward periphery is covered with an insulator, the other electrode of the capacitor having a part which is buried inside the sheath electrode and another part which is electrically connected with an impurity diffused layer to function as a source region of the transistor. Further, a structure in which a voltage of 1/2 V.sub.cc can be applied to a plate electrode of a memory cell having a trench capacitor is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.