Reactor chamber self-cleaning process

US4960488A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kam S. Law · San Jose, US
• Cissy Leung · Fremont, US
• Ching Chiang Tang · San Francisco, US
• Kenneth S. Collins · San Jose, US
• Mei Chang · San Jose, US
• Jerry Wong · Fremont, US
• David N. Wang · Saratoga, US

Key dates

• Filing date: Dec 19, 1989
• Grant date: Oct 2, 1990
• Expiry date: Dec 19, 2009

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/905
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses relatively lower pressure, farther electrode spacing and fluorinated gas chemistry for etching throughout the chamber and exhaust system. The local and extended etch steps may be used separately as well as together.