Chemical vapor deposition reactor and method of use thereof
US4976996A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1987 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Feb 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67011
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition (CVD) recstor is described which comprises an annular reaction zone with means for one or more reactive gases to be passed in single pass radial flow in which there is little lateral diffusion, means for preventing recirculation of reactive gases or reaction products from occurring at any point in the reaction chamber, and means in the reaction chamber for maintaining a laminar gas flow. rotational means permit the wafer support plates and wafers to be rotated around the central axis of the reaction zone and different gases may be passed over the wafers at different points in the reaction zone such that two or more materials can be deposited on the wafers during a single reactor run. Rotation through alternating deposition zones can also be done repeatedly such that a series of alternating layers of two different deposited materials is built up. This allows for the formation of polymetallic layers by CVD alone or in combination with other deposition processes such as sputtering, plasma or evaporation deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.