Dry etching by alternately etching and depositing
US4985114A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1989 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Oct 6, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.