Downstream microwave plasma processing apparatus having an improved coupling structure between microwave plasma
US4987284A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1990 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Jan 8, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A downstream microwave plasma processing apparatus useful in fabricating an integrated circuit semiconductor device includes a waveguide, a microwave transmitting window perpendicular to a microwave electric field in the waveguide, a plasma generating chamber below the window and a reaction chamber separated from the plasma generating region by a gas-porous microwave shield. The microwave energy is transmitted into the plasma generating chamber through the microwave transmitting window, and generates a plasma which is confined therein by the shield. Radicals of a short-lived reactive gas, generated in the plasma, pass through the shield and impinge onto a workpiece placed in the reaction chamber. Uniform and effective downstream plasma etching or ashing is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.