Method of removing residual corrosive compounds by plasma etching followed by washing
US5007981A · kind A · utility
91Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1990 |
| Grant date | Apr 16, 1991 |
| Priority date | — |
| Expiry date | Feb 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sample is plasma etched and then treated with a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is improved by washing the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, the step of washing is followed by drying the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.