Process for selective deposition of tungsten on semiconductor wafer
US5043299A · kind A · utility
87Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1989 |
| Grant date | Aug 27, 1991 |
| Priority date | — |
| Expiry date | Dec 1, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process for the selective deposition of tungsten on a masked semiconductor wafer is disclosed which comprises cleaning the surfaces of the wafer in an air-tight cleaning chamber, then transferring the cleaned wafer to a vacuum deposition chamber such as a CVD chamber for selective deposition of tungsten thereon without exposing the cleaned wafer to conditions which would recontaminate the cleaned wafer prior to said deposition, and then selectively depositing tungsten on the unmasked surfaces of the cleaned wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.