Semiconductor device including an improved trench arrangement
US5045904A · kind A · utility
Inventors
Key dates
| Filing date | Dec 20, 1988 |
| Grant date | Sep 3, 1991 |
| Priority date | — |
| Expiry date | Dec 20, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
A small and reliable semiconductor device is provided in a substrate which has an isolation trench and a capacitor trench. The isolation trench isolates a bipolar transistor from other semiconductor devices, and the capacitor trench provides capacitance to a memory cell which is formed in the substrate. The interior of the device isolation trench is kept in a floating state with respect to the surrounding semiconductor regions by forming an insulating film over the inner surface of the trench. In the capacitor trench, insulating layers and resilient conductive layers are formed alternately to form capacitance between the opposing conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.