Semiconductor integrated circuit device and method of manufacturing the same
US5060045A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1989 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Oct 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/90
Abstract
Disclosed is a semiconductor integrated circuit device adopting a gate array scheme, having a plurality of layers of wiring formed by a Design Automation system. The device according to the present invention includes a semiconductor substrate having basic cell forming regions, the basic cell forming regions being spaced from each other with wiring channel regions between adjacent basic cell forming regions. The wiring includes at least first-layer wiring lines arranged overlying the wiring channel regions; second-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions; and third-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions. The first-, second- and third-layer wiring lines respectively extend in first, second and third directions, the second direction being different from the first direction. The wiring pitches of the second-layer wiring lines and the third-layer wiring lines are set substantially equal to or smaller than the wiring pitch of th first-layer wiring lines. As a further aspect of the present invention, the ratio of wiring pitch of third-layer wiring lines to first-layer wiring lin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.