Hiroyuki Akimori
13Patents
7h-index
34Co-inventors
62Inventor score
Filing activity: Oct 17, 1989 → Dec 27, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5060045A | Semiconductor integrated circuit device and method of manufacturing the same | Electricity | 45 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5780882A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5739589A | Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6127255A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6169324A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6548847B2 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5811316A | Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5557147A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6342412B1 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6990388B2 | Mass-production transfer support system and semiconductor manufacturing system | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6894334B2 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.