Chemical vapor deposition method
US5091219A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Jul 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67011
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD process for the deposition of at least one layer of material on a wafer substrate is disclosed, which comprises the steps of : (a) positioning at least one wafer substrate horizontally within a generally circular wafer deposition zone; (b) passing a reactive gas radially through the zone and across the surface of the wafer substrate in a single pass and preventing the recirculation of any reactive gas or gaseous reaction products over any wafer substrate or through any part of the reaction chamber which affects the wafer substrate; (c) heating the wafer substrate to a point at which the desired deposition material will be formed from the reactive gas by reaction on the surface of the heated wafer substrate and will subsequently bond with the surface; and (d) causing the deposition of material on the surface to be substantially uniform by maintaining the radial flow of the gas at a flow rate to produce a predetermined residence time of the gas over each such wafer substrate sufficiently short to prevent significant lateral diffusion or depletion of the gas across the wafer substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.