Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
US5091761A · kind A · utility
56Cited by
4References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1989 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Jul 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
Disclosed is a semiconductor device including a charge storage capacitor having a storage electrode which is electrically connected to a switching transistor through a contact hole provided in an insulator and which has a greater film thickness than the radius of the contact hole, at least a part of the storage electrode being disposed above a data line. It is possible to reduce the memory cell area while preventing lowering in the capacitance, and thus realize high density and high integration of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.