Simultaneous glass deposition and viscoelastic flow process
US5104482A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1991 |
| Grant date | Apr 14, 1992 |
| Priority date | — |
| Expiry date | Mar 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A glass deposition viscoelastic flow process for forming planar and semi-planar insulator structures on semiconductor devices, which comprises feeding vaporized reactants into a reaction chamber at a reaction temperature between 750.degree.-950.degree. C. and subjecting the surface of the semiconductor devices to a high reactant velocity. The high reactant velocity allows the formation of a high quality, uniform glass layer at temperatures compatible with the fusion temperature, so that deposition occurs simultaneously with the viscoelastic flow of the glass. The simultaneous deposition and flow provides for topographical planarization substantially free of voids and other layer inconsistencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.