Method for forming a pattern
US5110711A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1991 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Apr 11, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.