Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base
US5139961A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.