Method of making semiconductor bonding bumps using metal cluster ion deposition
US5156997A · kind A · utility
37Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Feb 11, 1991 |
| Grant date | Oct 20, 1992 |
| Priority date | — |
| Expiry date | Feb 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making bonding bumps on the pads of an electrical chip including depositing a layer of metallic adhesion material over the surface, depositing metallic bumps on the metallic adhesion material over each of the pad areas using a focused liquid metal ion source, and chemically etching the layer of metallic adhesion material off the surface outside of the deposited bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.