Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate
US5168073A · kind A · utility
102Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1991 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Oct 31, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A dynamic random access memory (DRAM) storage cell having a storage contact capacitor comprising a tungsten and TiN storage node capacitor plate and the method for fabricating the same. At least a portion of the storage node capacitor plate is formed vertically in the DRAM. The TiN is controllably etched to increase the area of the storage node capacitor plate. An upper poly layer functions as the cell plate and is insulated from the storage node capacitor plate by a dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.