Method of making tungsten contact core stack capacitor
US5192703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1991 |
| Grant date | Mar 9, 1993 |
| Priority date | — |
| Expiry date | Oct 31, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The invention is a product and method for forming the same comprising a storage contact capacitor of a DRAM device wherein the storage node capacitor plate comprises first and second capacitor portions. The first portion is a self-aligned Tungsten and TiN core. In a first embodiment the second portion is a storage node polysilicon deposited and subjected to an insitu phosphorus diffusion doping. In a second embodiment the second portion comprises tungsten fingers formed elevationally and horizontally to overlie the tungsten and TiN core. Portions of TiN provide spacing between adjacent tungsten fingers. An upper polysilicon layer functions as the upper capacitor plate and is insulated from the lower capacitor plate by a dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.