Sample processing method and apparatus
US5200017A · kind A · utility
31Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Jan 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a sample comprises etching the sample by means of an etching plasma, and then treating the sample by means of a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, and drying the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.