Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5200232A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1990 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Dec 11, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of controlling deposition quality of line-of-sight and specimen surrounding surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surface which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.