Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5206788A · kind A · utility
88Cited by
8References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1991 |
| Grant date | Apr 27, 1993 |
| Priority date | — |
| Expiry date | Dec 12, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor for a memory device including a substrate, a bottom electrode and a top electrode. Between the bottom and top electrodes is either an alternating plurality of layers of ferroelectric material and intermediate electrodes or a plurality of layers of ferroelectric material. A method for forming the same through establishing one layer over the other is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.