Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
US5218216A · kind A · utility
66Cited by
15References
7Claims
0Family size
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Key dates
| Filing date | Dec 20, 1991 |
| Grant date | Jun 8, 1993 |
| Priority date | — |
| Expiry date | Dec 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.