Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5225561A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1990 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Sep 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0464
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics. Further disclosed are a vertical inverted reactor for chemical vapor deposition, and various methods of processing applied metal oxide films for enhanced HTSC character.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.